▎ 摘　　要

NOVELTY - A semiconductor cooling system comprises graphene material, where the graphene material comprises 18-23 pts. wt. graphene, 5-10 pts. wt. polyacrylonitrile fiber, 3-6 pts. wt. triethylenetetramine, 100-160 pts. wt. solvent, 1-5 pts. wt. rare earth oxide, 0.5-1 pts. wt. titanium carbide, 1-2 pts. wt. kaolin, 0.5-1.5 pts. wt. montmorillonite, 0.2-0.4 pts. wt. vermiculite, 0.2-0.4 pts. wt. mica, 0.2-0.4 pts. wt. brucite and 0.2-0.4 pts. wt. pseudoboehmite. USE - Semiconductor cooling system. ADVANTAGE - The semiconductor cooling system increases electron flow, improves cooling capacity and heating capacity and hot cold junction temperature to 100 degrees C and cold junction temperature to 50 degrees C and overcomes problems of slow electron flow speed of N-type semiconductor and P-type semiconductor and low efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for producing a semiconductor cooling system, which involves dispersing graphene, polyacrylonitrile fiber, kaolin, montmorillonite, vermiculite, mica, brucite and pseudoboehmite in one portion of solvent ultrasonically at 50-65 KHz for 10-25 minutes to obtain pre-mixed liquid A, stirring the triethylenetetramine and rare earth oxide in remaining solvent at 30-45 degrees C for 30-60 minutes to obtain pre-mixed liquid B, adding the pre-mixed liquid A to the pre-mixed liquid B, adding titanium carbide to the mixture, applying magnetic intensity of 4650-4800 GS to the mixture, increasing magnetic intensity to 5000-5250 GS, stirring the mixture for 15-20 minutes and dispersing the mixture ultrasonically for 30-45 minutes to obtain finished product.