▎ 摘　　要

NOVELTY - The power semiconductor module (100) has a laminated N-layers plate-shaped thermally-conductive anisotropic element (3) and a power semiconductor element (1) that is bonded to the outer plate surface of the thermally-conductive anisotropic element of the first layer, where N is an odd number of 3 or more. The heat conductivity in the direction of the plate thickness and in the first direction parallel to the plate surface is higher than the heat conductivity in the second direction orthogonal to the first direction and parallel to the plate surface. The sum of the thicknesses of the thermally-conductive anisotropic elements of the odd-numbered layers is same as the sum of the thicknesses of the heat conduction anisotropic elements of the even-numbered layers. The thickness of the thermally-conductive anisotropic element of the even-numbered layer is larger than the thickness of the thermally-conductive anisotropic element of the odd-numbered layer. USE - Power semiconductor module for inverter device used in electric vehicle or hybrid vehicle. ADVANTAGE - The curvature of the plate-shaped thermally-conductive anisotropic element of the laminated N layer is suppressed, and deterioration of the heat transfer performance of the power semiconductor module is suppressed. DETAILED DESCRIPTION - The heat conductivity in the plate thickness direction and first direction is higher than the heat conductivity in the second direction in the thermally-conductive anisotropic element of the first layer and third layer. The heat conductivity in the plate thickness direction and second direction is higher than the heat conductivity in the first direction in the thermally-conductive anisotropic element of the second layer. The thickness of the thermally-conductive anisotropic element of the first layer is the same as the thickness of the thermally-conductive anisotropic element of the third layer. The sum of the thicknesses of the thermally-conductive anisotropic elements of the first layer and third layer is the same as the thickness of the thermally-conductive anisotropic elements of the second layer. The thickness of the thermally-conductive anisotropic element of the second layer is the same as the thickness of the thermally-conductive anisotropic element of the first layer. The thicknesses of the thermally-conductive anisotropic elements of the odd-numbered layers are the same. The thermally-conductive anisotropic element of the odd-numbered layer is provided with several graphene sheets (5) whose long sides are parallel to the first direction and whose short sides are parallel to the plate thickness direction. The graphene sheets are laminated in the second direction. The thermally-conductive anisotropic element of the even-numbered layer is provided with several graphene sheets whose long side parallel to the second direction and short side parallel to the plate thickness direction are laminated in the first direction. Two power semiconductor elements are arranged and joined in the second direction on the outer plate surface of the thermally-conductive anisotropic element of the first layer, which is an odd-numbered layer. A cooler (20) is bonded to the outer plate surface of the thermally-conductive anisotropic element of the Nth layer through an insulating heat radiating element. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the power semiconductor module for inverter device. (Drawing includes non-English language text) Power semiconductor element (1) Thermally-conductive anisotropic element (3) Graphene sheet (5) Cooler (20) Power semiconductor module (100)