▎ 摘　　要

NOVELTY - Chemical mechanical polishing method involves preparing a polishing pad comprising a polishing surface, where the polishing surface having an elastic modulus at room temperature of 300-400 megapascals, positioning a semiconductor structure having a surface, where the structure surface and the polishing surface of the polishing pad face each other, supplying polishing slurry between the surface of the semiconductor structure and the polishing surface of the polishing pad, where the polishing slurry comprises nano-abrasive having an average particle diameter of less than 10 nanometers, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the structure surface with the polishing slurry. USE - The polishing method is useful in a method of manufacturing a semiconductor device. ADVANTAGE - The polishing method is capable of improving a polishing rate and reducing damage and shape deformations of a structure, e.g., a fine surface structure of a semiconductor device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method of manufacturing a semiconductor device involving adopting the chemical mechanical polishing; (2) the polishing pad comprising a polishing surface having an elastic modulus at room temperature of 300-400 megapascals; and (3) a chemical mechanical polishing device comprising a rotatable platen, the polishing pad on the platen and a polishing slurry supplier for supplying polishing slurry, where the polishing slurry supplier is arranged adjacent to the polishing pad.