▎ 摘　　要

NOVELTY - Preparing high dielectric constant polyimide/three-dimensional graphene composite film comprises (i) (ia) cleaning the foam nickel, drying, (ib) placing cleaned foam nickel into quartz boat, placing quartz boat into heating area of CVD tubular furnace body, introducing nitrogen into CVD tubular furnace and heating CVD tubular furnace, introducing nitrogen into CVD tubular furnace and introducing into anhydrous ethanol and bringing in absolute ethanol, stopping taking anhydrous ethanol and stopping heating, introducing nitrogen and cooling CVD tubular furnace, and (ii) (iia) soaking foam nickel growing three-dimensional graphene in ferric chloride solution, removing foam nickel, (iib) adding 4,4-diamino diphenyl ether into N,N-dimethyl acetamide and pyromellitic anhydride in batches, and (iic) placing three-dimensional graphene on glass sheet, covering PAA solution, performing gradient heating for imidization treatment, soaking glass plate in hot water, taking out the film and drying. USE - The method is useful for preparing high dielectric constant polyimide/three-dimensional graphene composite film. ADVANTAGE - The method solves the problem that the existing graphene sheet layer has strong-interaction, has strong aggregation trend which is difficult to realize the enhanced effect of the polymer graphene material, is more beneficial for developing the electrical performance advantage of the graphene to improve the dielectric performance of the film. DETAILED DESCRIPTION - Preparing high dielectric constant polyimide/three-dimensional graphene composite film comprises (i) (ia) cleaning the foam nickel, and then drying to obtain foam nickel after cleaning, (ib) placing the cleaned foam nickel into quartz boat, placing the quartz boat into heating area of chemical vapor deposition (CVD) tubular furnace body, introducing nitrogen into CVD tubular furnace, and heating CVD tubular furnace to 900-950℃ under the protection of nitrogen, keeping the temperature at 900-950℃, introducing nitrogen into CVD tubular furnace and introducing into anhydrous ethanol, keeping the temperature under the condition of 900-950℃ and bringing in absolute ethanol, stopping taking anhydrous ethanol and stopping heating, introducing nitrogen, and naturally cooling CVD tubular furnace to below 40℃ under the protection of nitrogen to obtain foam nickel for growing three-dimensional graphene, and (ii) (iia) soaking the foam nickel growing three-dimensional graphene in ferric chloride solution, removing foam nickel to obtain three-dimensional graphene, (iib) adding 4,4-diamino diphenyl ether into N,N-dimethyl acetamide, and adding pyromellitic anhydride in batches to obtain PAA solution, and (iic) placing three-dimensional graphene on the glass sheet, covering the PAA solution, performing gradient heating for imidization treatment, soaking the glass plate in hot water, peeling the film from the glass sheet, taking out the film, and drying to obtain high dielectric constant polyimide/three-dimensional graphene film.