▎ 摘　　要

NOVELTY - The photodetector (3) has an active element (13) which overlaps a longitudinal section (12) of a waveguide and comprises a material or consists of material that absorbs electromagnetic radiation of wavelength and generates an electrical photo signal as a result of the absorption. The two waveguide segments (12a, 12b) are in contact on one side. A gate electrode (15a, 15b) comprises silicon or consists of silicon on the side facing the active element. USE - Photodetector used in semiconductor device (claimed). ADVANTAGE - The optimal overlap is achieved between the absorbing material and the active area of the photodetector. The optical mode interacts efficiently with an active optical material. The dumping of the graphene film of the detector takes place through a transfer method. The large number of semiconductor devices is produced in a simple and fast manner. The circuit is protected from environmental influences such as water. The losses in the waveguide are reduced. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a modulator; and (2) a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the semiconductor device. Photodetector (3) Longitudinal section (12) Waveguide segments (12a, 12b) Active element (13) Gate electrode (15a, 15b)