▎ 摘　　要

NOVELTY - Formation of standard leak hole based on self defects of graphene involves coating poly(methyl methacrylate) on graphene-copper foil, etching using an etching solution to remove the copper foil, washing with deionized water, placing the graphene on a well-punched silicon wafer, then placing in an evaporating dish, drying for 60 minutes, pouring acetone into the evaporating dish to remove poly(methyl methacrylate), drying to complete the transfer of graphene, and curing. USE - Formation of standard leak hole based on self defects of graphene. ADVANTAGE - The method enables efficient formation of standard leak hole based on self defects of graphene. The size of the channel of the hole can be controlled by controlling the number of layers of graphene, to obtain standard leak hole of the required leak rate, such that standard leak rate is controllable, the leak rate is wide, small leak rate measurement can be realized to ensure that the gas in the channel is in molecular flow state.