▎ 摘　　要

NOVELTY - Method for preparing metastable graphene film, involves (a) heating graphene oxide film at less than 1800-2100 degrees C at a heating rate of less than or equal to 100 degrees C/minute, and maintaining the temperature for 4-16 hours for reducing the defect of graphene oxide film to less than 0.5%, and maintaining non-AB structure, and (b) increasing the temperature to 2300-2400 degrees C at a heating rate of greater than or equal to 60 degrees C/minute, and dripping below 1800 degrees C within 10 minutes to obtain the metastable graphene film. USE - The film is used for high-performance optoelectronic device, fast high-capacity storage device, battery capacitor and other energy storage device. ADVANTAGE - The method utilizes simple thermodynamic unit, controls the sintering temperature and time, and the film has both stability and weakly coupled electron cloud state of disordered layer graphite or graphene.