▎ 摘　　要

NOVELTY - The method involves injecting fluorine sulfur gas inside a furnace with a silicon carbide substrate for 1-30 seconds to form a native oxide film on the silicon carbide substrate. The silicon carbide substrate is preheated about 200-800 degree Celsius. The furnace is heated to about 1400-1600 degree Celsius. The native oxide film formed on the silicon carbide substrate is removed to form an epitaxial graphene layer on the silicon carbide substrate. USE - Method for forming an epitaxial graphene layer on an electronic component i.e. semiconductor memory. ADVANTAGE - The method enables uniformly forming the high-quality graphene layer on the silicon carbide substrate such that the electronic component consumes less power. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a graphene layer formation method.'(Drawing includes non-English language text)'