▎ 摘　　要

NOVELTY - The method involves forming a graphene layer (GP1) on a first substrate (SUB1). A device portion (DP1) is formed on the first substrate, and is provided with the graphene layer. A second substrate (SUB2) is attached onto the device portion and the first substrate is removed. A source electrode (S1) and a drain electrode (D1) of the device portion are formed so as to contact the first region and the second region of the graphene layer respectively. USE - Method for manufacturing graphene device. ADVANTAGE - The damage and pollution caused to the graphene layer directly can be minimized. Since the number of manufacturing processes is reduced, the manufacturing cost of whole device can be simplified and the productivity of the graphene device can be improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the method for manufacturing the graphene device. Drain electrode (D1) Device portion (DP1) Graphene layer (GP1) Source electrode (S1) Substrates (SUB1, SUB2)