▎ 摘　　要

NOVELTY - The method involves forming an electrode on a thin film structure. Polycrystalline silicon is formed on graphene by utilizing a thin film structure. Amorphous silicon is heat-treated on the graphene that is formed on a metallic board. The thin film structure is formed with conductive silicon that is formed on another conductive silicon. A buffer layer is formed between the graphene and the polycrystalline silicon. The metallic board is separated from a silicon semiconductor element based on electrolysis process. A final substrate is formed in a separated side by the metallic board. USE - Thin film silicon solar cell manufacturing method. ADVANTAGE - The method enables forming the graphene on the metallic board by utilizing a growth substrate of high quality polycrystalline silicon for manufacturing the high quality thin film solar cell, easily manufacturing a simple structure and high efficiency thin film solar cell, improving flexibility of the solar cell, saving manufacturing cost and suppressing interfacial reaction by performing interdiffusion between the metal and the amorphous silicon. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a thin film silicon solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a thin film silicon solar cell manufacturing method.'(Drawing includes non-English language text)'