▎ 摘　　要

NOVELTY - The heterojunction structure based on diselenide platinum and silicon, is a platinum diselenide/insulating layer/silicon heterojunction structure. The insulating layer is on the silicon layer. The thickness of the insulating layer is 0.3-2.8 nm. A platinum diselenide layer is on the insulating layer. USE - Heterojunction structure used as photoelectric detector in modern miniaturized electronics industry. ADVANTAGE - The metal nano-particles can realize plasma resonance effect, which can generate strong electromagnetic field around it, so as to improve the absorption of the device to light and enhance the electrostatic field to facilitate generation and transmission of photo-generated carrier, so that the characteristic of the photoelectric detector can be improved. The method of the diselenide platinum/insulating layer/silicon hetero-junction structure of the invention is simple, it can be at low temperature (400degrees Celsius), using simple device, obtaining the high quality. The metal nanoparticles can improve the switch ratio, the response degree and the detection rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation method of the heterojunction structure. DESCRIPTION OF DRAWING(S) - The drawing is a schematic view showing the preparation of a platinum diselenide/ultra-thin insulating layer/silicon heterojunction structure. (Drawing includes non-English language text).