▎ 摘　　要

NOVELTY - A zinc oxide substrate transfer graphene annealing process involves adopting a high-temperature annealing mode, repairing graphene defect generated during substrate transfer process, and removing impurities that are not removed during transfer process, where a forbidden band is introduced in the graphene. USE - Process for annealing zinc oxide substrate transfer graphene. ADVANTAGE - The process enables effectively removing water molecules and other impurities absorbed on the surface of the graphene due to lower-temperature annealing is adopted in an argon atmosphere, and forming effective contact of the graphene attached on the substrate and the silicon carbide substrate by adopting high-annealing temperature of 1000 degrees C. The process enables providing cleaned surface of the transferred graphene and less defects. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a process for annealing zinc oxide substrate transfer graphene. '(Drawing includes non-English language text)'