• 专利标题:   Method for producing hybrid supercapacitor, involves growing vertical graphene electrode structure on each collector by plasma enhanced chemical vapor deposition (PECVD) without using catalyst for growth and binder.
  • 专利号:   US9911544-B1
  • 发明人:   MEYYAPPAN M
  • 专利权人:   NASA US NAT AERO SPACE ADMIN
  • 国际专利分类:   H01G011/28, H01G011/32, H01G011/86
  • 专利详细信息:   US9911544-B1 06 Mar 2018 H01G-011/28 201819 Pages: 11 English
  • 申请详细信息:   US9911544-B1 US301285 10 Jun 2014
  • 优先权号:   US301285

▎ 摘  要

NOVELTY - The method involves growing porous vertical graphene electrode structures on respective spaced apart collectors by PECVD (405) and filling the pores on each structure with metal oxide (410) to provide redox capacitance, creating a supercapacitor without using catalyst for growth and a binder for mixing the electrode structures and or metal oxide. The graphene structures are separated from each other by a separator and serve as carbon nanowalls. A hydrocarbon source may be used for growth. USE - Method for producing hybrid supercapacitor, particularly metal oxide vertical graphene hybrid supercapacitor. ADVANTAGE - Vertical graphene has sufficient conductivity to reduce electrode material resistance, especially without any catalysts or binders. Adding a metal oxide may enable redox capacitance, increasing the total capacitance, which may increase energy density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an apparatus for producing hybrid supercapacitor. DESCRIPTION OF DRAWING(S) - The drawing shows the flow diagram of a process for growing vertical graphene electrodes. Process for growing vertical graphene electrodes (400) Growing porous vertical graphene electrode structures on collectors (405) Filling the pores with metal oxide (410)