▎ 摘　　要

NOVELTY - The method involves placing a substrate (105) into a chemical vapor deposition (CVD) reactor (100). A solid carbon source (110) is placed into the reactor. The substrate and carbon source are heated in the reactor, where the substrate is stacked on a top of the carbon source in the reactor and placed apart from the source in the reactor, and partially surrounds the source in the reactor. Process gases are introduced into the reactor. Pressure is maintained in the reactor less than atmospheric pressure. Sufficient time for forming a film is waited, while the substrate and the source are heated. USE - Method for forming a graphene film on a substrate i.e. copper foil. ADVANTAGE - The method enables heating the substrate and the solid carbon source in the reactor and forming high quality single-layer large graphene to be strongly reinforced by CVD. DETAILED DESCRIPTION - The process gas is selected from a group consisting of hydrogen, nitrogen and noble gas. The reactor is a CVD tube furnace (135). The film is made of graphene. The solid carbon source is made of graphite and amorphous carbon. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional side view a CVD reactor, a substrate and a solid carbon source. CVD reactor (100) Substrate (105) Solid carbon source (110) Cylindrical reaction tube (115) CVD tube furnace (135)