• 专利标题:   Enhancing thermal conductivity of reduced graphene oxide, comprises preparing large-area reduced graphene oxide by thermal reduction method, preparing high-quality boron nitride by mechanical exfoliation, annealing heterojunction high-quality boron nitride/reduced graphene oxide and tuning.
  • 专利号:   CN114477157-A
  • 发明人:   TIAN J, CHEN S, LIU Z
  • 专利权人:   UNIV NANKAI
  • 国际专利分类:   C01B021/064, C01B032/184, C01B032/194
  • 专利详细信息:   CN114477157-A 13 May 2022 C01B-032/194 202266 Chinese
  • 申请详细信息:   CN114477157-A CN10266776 17 Mar 2022
  • 优先权号:   CN10266776

▎ 摘  要

NOVELTY - Method for enhancing the thermal conductivity of reduced graphene oxide, comprises preparing large-area reduced graphene oxide by thermal reduction method, preparing high-quality boron nitride by mechanical exfoliation and transferring to a quartz wafer with reduced graphene oxide to form high-quality boron nitride/reduced graphene oxide heterojunction, annealing heterojunction high-quality boron nitride/reduced graphene oxide in a mixed gas of argon and hydrogen (the volume ratio of argon and hydrogen was 95:5) by a high temperature annealing furnace and tuning the thermal conductivity of high-quality boron nitride/reduced graphene oxide by controlling the thickness of high-quality boron nitride. USE - The method is useful for enhancing the thermal conductivity of reduced graphene oxide. ADVANTAGE - The method: controls the reduction temperature and the thickness of boron nitride (h-BN), the thermal conductivity of high-quality boron nitride/reduced graphene oxide heterojunction is improved by nearly 18 times than the graphene oxide, the rising temperature of high-quality boron nitride is about 16 times lower than the low of graphene oxide. Compared with the traditional aluminum, copper, and general two-dimensional material, h -BN/reduced graphene oxide thermal conductive is adjustable in the range of 1685 Wm-1K-1. The method provides a preparation route of two-dimensional material hetero junctions with adjustable high-thermal conductivity.