▎ 摘　　要

NOVELTY - Method for enhancing the thermal conductivity of reduced graphene oxide, comprises preparing large-area reduced graphene oxide by thermal reduction method, preparing high-quality boron nitride by mechanical exfoliation and transferring to a quartz wafer with reduced graphene oxide to form high-quality boron nitride/reduced graphene oxide heterojunction, annealing heterojunction high-quality boron nitride/reduced graphene oxide in a mixed gas of argon and hydrogen (the volume ratio of argon and hydrogen was 95:5) by a high temperature annealing furnace and tuning the thermal conductivity of high-quality boron nitride/reduced graphene oxide by controlling the thickness of high-quality boron nitride. USE - The method is useful for enhancing the thermal conductivity of reduced graphene oxide. ADVANTAGE - The method: controls the reduction temperature and the thickness of boron nitride (h-BN), the thermal conductivity of high-quality boron nitride/reduced graphene oxide heterojunction is improved by nearly 18 times than the graphene oxide, the rising temperature of high-quality boron nitride is about 16 times lower than the low of graphene oxide. Compared with the traditional aluminum, copper, and general two-dimensional material, h -BN/reduced graphene oxide thermal conductive is adjustable in the range of 1685 Wm-1K-1. The method provides a preparation route of two-dimensional material hetero junctions with adjustable high-thermal conductivity.