▎ 摘　　要

NOVELTY - Manufacture of pellicle involves (a) preparing a substrate having an etch stop layer (L1) and an etch stop layer (L2), (b) forming a pellicle film layer having compressive stress or tensile stress remaining on the etch stop layer (L1), (c) forming an etch stop layer (L3) over the pellicle film layer, (d) patterning the etch stop layer (L2) to form an etch stop pattern, (e) etching the substrate using the etch stop pattern as a mask, (f) adjusting or removing the thickness of at least one of the etch stop layer (L1) and the etch stop layer (L3) in the window area. At least one of the etch stop layers (L1) and (L3) is formed such that a stress opposite to that remaining in the pellicle film layer remains. In the step (f), the residual stress of the window region of the stack including etch stop layer (L1) and the etch stop layer (L3) and the pellicle film layer is 5-500 MPa, and the thickness of at least one of the etch stop layer (L1) and the etch stop layer (L3) is adjusted. USE - Manufacture of pellicle (claimed) for extreme UV lithography used for manufacturing semiconductor device or liquid crystal display panel. ADVANTAGE - The pellicle film having improved mechanical strength is manufactured. DETAILED DESCRIPTION - Manufacture of pellicle involves (a) preparing a substrate having an etch stop layer (L1) formed on a surface (a) and an etch stop layer (L2) formed on a surface (b) opposite to the surface (a), (b) forming a pellicle film layer having compressive stress or tensile stress remaining on the etch stop layer (L1), (c) forming an etch stop layer (L3) over the pellicle film layer, (d) patterning the etch stop layer (L2) to form an etch stop pattern, (e) etching the substrate using the etch stop pattern as a mask to expose the etch stop layer (L1), (f) adjusting or removing the thickness of at least one of the etch stop layer (L1) and the etch stop layer (L3) in the window area. At least one of the etch stop layer (L1) and the etch stop layer (L3) is formed such that a stress opposite to that remaining in the pellicle film layer remains. In the step (f), the residual stress of the window region of the stack including at least one of the etch stop layer (L1) and the etch stop layer (L3) and the pellicle film layer is 5-500 MPa, and the thickness of at least one of the etch stop layer (L1) and the etch stop layer (L3) is adjusted. An INDEPENDENT CLAIM is included for the pellicle.