▎ 摘　　要

NOVELTY - The structure has a doped semiconductor layer formed on a substrate. An insulating layer is fixed with an active region layer. A bottom part of the insulating layer is fixed with the doped semiconductor layer. A single-layer graphene layer is fixed with a complementary microstructure that is fixed with an active region of an electrode, where thickness of the graphene layer is about 0.1-0.5nm and thickness of the substrate is about 1-50 microns. The complementary micro-structure of the active region layer is formed as a rectangular structure. USE - Terahertz graphene micro modulator structure. ADVANTAGE - The structure realizes incident THz wave depth modulation process by changing external bias graphene Fermi level. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a terahertz graphene micro modulator structure manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a terahertz graphene micro modulator structure.