▎ 摘　　要

NOVELTY - Threshold value conversion device comprises a dielectric material layer, which located between a first electrode layer and a second electrode layer. The metal ion of the second electrode layer is transferred to the first electrode layer through the dielectric material layer under action of voltage. The dielectric material layer is a multi-layer stack structure of three layers, where the number of layers in the dielectric material layer is an odd number. The odd number layer is a stoichiometric oxide. The even number layer is an excess oxygen content oxide. USE - The device is useful in a semiconductor device. ADVANTAGE - The device: has high on-state current, high switch ratio, better consistency and durability, simple structure and easy preparation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing the threshold value conversion device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the threshold value conversion device.