▎ 摘　　要

NOVELTY - A quantum interference device structure with novel oxide materials comprises a first superconductor layer and a first dielectric layer overlying the first superconductor layer, a graphene layer overlying the first dielectric layer, a second dielectric layer overlying the graphene, a second superconducting layer overlying the second dielectric layer, a metal layer in contact with the graphene layer, where the graphene layer is separated from first and second superconducting layers by the first dielectric layer and second dielectric layer. The metal layer is not in contact with the first and second superconducting layer. USE - Quantum interference device structure for use in quantum interference devices, sensors and other devices. DETAILED DESCRIPTION - A quantum interference device structure comprises a first superconductor layer and a first dielectric layer overlying the first superconductor layer, a graphene or two-dimensional semiconductor thin film layer overlying the first dielectric layer, a second dielectric layer overlying the graphene or two-dimensional semiconductor thin film layer, a second superconducting layer overlying the second dielectric layer, a metal layer in contact with the graphene or two-dimensional semiconductor thin film layer, where the graphene or two-dimensional semiconductor thin film layer is separated from first and second superconducting layers by the first dielectric layer and the second dielectric layer, respectively. The metal layer is not in contact with the first superconducting layer and the second superconducting layer. An INDEPENDENT CLAIM is also included for a method for preparing a quantum interference device structure.