▎ 摘　　要

NOVELTY - The LED has an epitaxial structure formed with an independent light emitting unit. A metal contact electrode is provided with a top p contact electrode and a bottom n contact electrode. The top p contact electrode is located above the epitaxial structure. The bottom n contact electrode is located above a graphene conductive layer. A supporting substrate is fixed on the epitaxial substrate by epitaxial growth of an aluminum nitride layer. The graphene conductive layer and the top p contact electrode are fixed in a c-axis growth direction. USE - Vertical structure deep ultraviolet LED based on graphene electrode. ADVANTAGE - The LED can effectively avoid current congestion effect generated by LED electronic transverse transport and improve light output power. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of the vertical structure deep ultraviolet LED based on graphene electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene electrode based vertical structure deep UV LED.