• 专利标题:   Non-contact semiconductor sensor for non-contact image sensing system, has substrate with permittivity, semiconductor material formed on one surface of substrate, and metal electrode formed on other surface of substrate.
  • 专利号:   KR2023049297-A
  • 发明人:   MUN H S, KIM J S
  • 专利权人:   UNIV CHONBUK NAT IND COOP FOUND
  • 国际专利分类:   H01L027/146
  • 专利详细信息:   KR2023049297-A 13 Apr 2023 H01L-027/146 202338 Pages: 12
  • 申请详细信息:   KR2023049297-A KR132249 06 Oct 2021
  • 优先权号:   KR132249

▎ 摘  要

NOVELTY - Non-contact semiconductor sensor (10) comprises a substrate (20) having a permittivity; a semiconductor material formed on one surface of the substrate and having an electrical signal corresponding to a change in space charge caused by a state of an object positioned close to the substrate and a movement of the object; and a metal electrode formed on the other surface of the substrate and outputting an electrical signal induced from the semiconductor material to the outside. USE - The sensor is useful for non-contact image sensing device (claimed). ADVANTAGE - The non-contact semiconductor sensor comprises a sensor substrate and a semiconductor material that is formed on the surface of the sensor substrate, and thus enables reducing the object state and object movement without additional power supply from the outside. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the non-contact semiconductor sensor. 10Non-contact semiconductor sensor 20Substrate 30Contact terminal 40Signal line