▎ 摘　　要

NOVELTY - Chemically-sensitive field effect transistor having multi-layered structure for chip fabrication, comprises substrate layer having an extended body, a first insulating layer positioned above the extended body of the substrate layer, a second insulating layer positioned above the first insulating layer. The second insulating layer is configured to form one or more side wall members of a well for a fluid containing an analyte, a source electrode and a drain electrode each having a top surface and a bottom surface. The top surface separated from the bottom surface by opposing outer and inner side portions, each of the opposed side portions and each of the bottom surfaces of the source and drain electrodes being disposed within or over the first insulating layer. USE - Chemically-sensitive field effect transistor having multi-layered structure for chip fabrication. ADVANTAGE - The chemically-sensitive field effect transistor has improved safety, quality, and effectiveness of health care. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for following: a biosensor chip, which comprises multiple chemically-sensitive field effect transistors, individually having a multi-layered structure configured to perform a set of measurements of a biological reaction involving a binding event of one or more label-free biological analytes, the field effect transistors individually comprises a substrate layer having an extended body, a first insulating layer positioned above the extended body of the substrate layer, a source electrode and a drain electrode provided in or over the first insulating layer, the source electrode separated from the drain electrode by a distance, a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes, where second insulating layer forms two or more side wall members of a well for a fluid comprising the analyte, a two-dimensional layer of channel material selected from molybdenum disulfide (MoS2) and graphene positioned at a bottom of an opening of the well and above the first insulating layer and extending between the source and drain electrodes thereby forming a channel between the source electrode and drain electrode, and a solution gate region configured to form a solution gate above the channel in response to the fluid being flowed over the channel of the MoS2 layer at the bottom of the opening of the well, where solution gate is configured to enable the set of measurements to be made to determine differences between individual I-Vg curves comprising a first I-Vg curve that serves as a reference curve and a second I-Vg curve having a shifted and changed shape relative to the reference curve based on characteristics of the analyte present in the fluid being flowed over to have direct fluidic contact with the channel, where each I-Vg curve comprises a p-type portion and an n-type portion and where the set of measurements for the individual I-Vg curves includes: an on-state drain current (Ion) taken from a p-type portion of the I-Vg curve; a first transconductance measurement taken at the steepest and/or flattest sections of the p-type portion of the I-Vg curve, a Dirac voltage (VDirac) measurement; a second transconductance measurement taken at the steepest and/or flattest sections of the n-type portion of the I-Vg curve, and an on-state drain current (Ion) taken from the n-type portion of the I-Vg curve; and a system, which comprises biosensor chip having a multiple chemically-sensitive field effect transistors, the individual chemically-sensitive field effect transistors having a multi-layered structure for determining characteristics of one or more analytes contained in a fluid flowed over a channel of the field effect transistor, the field effect transistor comprising: a substrate layer having an extended body, a first insulating layer positioned above the extended body of the substrate layer, a source electrode and a drain electrode positioned in or over the first insulating layer, the source electrode and the drain electrode being separated by a distance, a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes.