▎ 摘　　要

NOVELTY - The method involves providing a solvent layer (5) on a hydrophilic surface (3) of a doped silicon substrate (2), where the solvent layer is made of a material selected from a group consisting of acetone, ethyl lactate, isopropyl alcohol and methylethyl ketone. A graphene layer (4) is deposited on the solvent layer. The hydrophilic surface of the substrate is made of silicon oxide. The substrate is made of silicon oxide or passivized silicon. The substrate is washed with water and dried at temperature of about 20 to 45 degree Celsius after providing the solvent layer. USE - Method for coupling a graphene layer and a doped silicon substrate of an electronic device such as transistor, non-volatile memory, photo detector and NH3/NO2 sensor (all claimed). ADVANTAGE - The method enables modifying an angle of contacts of the oxide layer to provide a more hydrophobic surface as compared to the standard treatment and performing pre-treatment of substrates of different shapes and sizes, and enables extension of the process to brittle, thin or flexible substrates in the absence of energetic mechanical action. The method enables carrying out comparison process between the electrical properties of two samples without performing lithographic process for making contacts so as to prevent introduction of additional contamination on the graphene surface. The method enables performing pre-treatment process of the silicon dioxide surface, in addition to being less aggressive as compared to the standard procedure so as to improve the electrical properties of the transferred graphene with reduction of the sheet resistance approximately by a factor of three and improve the structural quality of the graphene due to reduction of the macroscopic defects, better adhesion to the substrate and reduction of the phenomena of electronic scattering at the interface with the silicon dioxide. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an electronic device. Transmission line model structure (1) Doped silicon substrate (2) Hydrophilic surface of doped silicon substrate (3) Graphene layer (4) Solvent layer (5)