• 专利标题:   Transferring a suspended graphene by fixing a mask material on metal substrate with graphene by chemical vapor deposition, and vapor depositing metal over the graphene, removing metal mask material in etching solution, washing and drying.
  • 专利号:   CN110330013-A
  • 发明人:   LI X, NIU Y, QING F, LIU C
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   C01B032/186, C01B032/194
  • 专利详细信息:   CN110330013-A 15 Oct 2019 C01B-032/194 201988 Pages: 7 Chinese
  • 申请详细信息:   CN110330013-A CN10773373 21 Aug 2019
  • 优先权号:   CN10773373

▎ 摘  要

NOVELTY - A suspended graphene is transferred by (1) fixing a mask material on metal substrate with graphene by chemical vapor deposition, and vapor depositing metal over the graphene; (2) removing metal mask material that has a structural layer of metal/graphene/metal substrate in etching solution after etching metal substrate to form a structural layer of metal/graphene; and (3) washing layer structure of metal/graphene, removing with hollow substrate and drying. USE - Transferring a suspended graphene. ADVANTAGE - The method adopts multiple mask material to graphene surface for depositing a metal. The mask material fixed on graphene surface can be obtained after different area of exposed graphene. Graphene can obtain different suspending area after etching transfer to realize a controllable area of suspended graphene transfer.