▎ 摘　　要

NOVELTY - Preparation of silicon carbide graphene substrate epitaxial material comprises growing silicon carbide base layer; growing silicon carbide-graphene layer; using substrate to prepare special device to process silicon carbide-graphene composite layer, and obtaining silicon carbide graphene epitaxial wafer material; and growing graphene again after cutting silicon carbide crystal, processing to obtain silicon carbide graphene substrate epitaxial material, repeatedly operating, and obtaining the industrial silicon carbide graphene substrate epitaxial material. USE - The method is for preparation of industrial silicon carbide graphene substrate epitaxial material.