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  • 专利标题:   Formation of graphene used as channel material for post-silicon generation of field effect transistor, involves preparing silicon carbide substrate and irradiating pulse laser to desired process location of surface of silicon substrate.
  • 专利号:   JP2015040156-A
  • 发明人:   FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP, UNIV KYUSHU
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP2015040156-A 02 Mar 2015 C01B-031/02 201519 Pages: 9 Japanese
  • 申请详细信息:   JP2015040156-A JP173011 23 Aug 2013
  • 优先权号:   JP173011

▎ 摘　　要

NOVELTY - A silicon carbide substrate is prepared (S101). A pulse laser is irradiated (S102) to the desired process location of the surface of the silicon substrate, to form a graphene in the desired location. USE - Formation of graphene used as channel material for post-silicon generation of field effect transistor. ADVANTAGE - The method enables formation of graphene having excellent pattern without degradation of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for apparatus, which comprises a stage in which the substrate is mounted, and a laser irradiation unit to irradiate the pulse laser. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of formation of graphene. (Drawing includes non-English language text) Preparation of silicon carbide substrate (S101) Irradiation process (S102)