• 专利标题:   Method of forming graphene oxide based layer used for manufacturing article, involves preparing solution of graphene oxide and solution of nanostructures, and applying solutions onto surface of substrate.
  • 专利号:   US2013199605-A1, US9917255-B2
  • 发明人:   HUANG J, KIM J, TUNG V C
  • 专利权人:   UNIV NORTHWESTERN
  • 国际专利分类:   H01L051/00, H01L051/42, B05D001/00, B05D005/12, B82Y010/00, B82Y030/00, C23C018/12, H01L051/44
  • 专利详细信息:   US2013199605-A1 08 Aug 2013 H01L-051/00 201355 Pages: 14 English
  • 申请详细信息:   US2013199605-A1 US758183 04 Feb 2013
  • 优先权号:   US594512P, US758183

▎ 摘  要

NOVELTY - Method of forming graphene oxide based layer involves preparing solution of graphene oxide, preparing a solution of nanostructures, and applying the solution of graphene oxide and solution of nanostructures onto a surface of substrate (110) to form a graphene oxide based layer with nanostructures. USE - Method of forming graphene oxide based layer used for manufacturing article (claimed) e.g. anode modifier for polymer solar cell. ADVANTAGE - The method provides graphene oxide based layer having sufficiently improved conductive. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of article. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photovoltaic device. Solar cell (100) Substrate (110) Nanostructure composite layer (120) Active layer (130) Cathode (140)