▎ 摘　　要

NOVELTY - Fabricating graphene tunnel field effect transistor involves growing a first layer on a silicon carbide, where the first layer comprises graphene, growing a second layer over the first layer, where the second layer comprises graphene, forming a source polarity gate metal over the source region, a drain polarity gate metal over the drain region, and a control gate metal electrode over the channel region, p-source region, n-channel, and n+ -drain region in the second graphene layer are formed by using a source polarity gate metal, a control gate metal electrode, and a drain polarity gate metal, respectively, and insulating the source polarity gate metal from the second layer using a high-k dielectric, where a control gate metal electrode, and a drain polarity gate metal from the second layer using a carbon allotrope (Diamond-like Carbon). USE - Method for fabricating graphene tunnel field effect transistor. ADVANTAGE - The graphene tunnel field effect transistor has cost-effective, more efficient, and less leakage current. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene tunnel field effect transistor. 102Substrate 104-1First layer 104-2Second layer 106Source meta 110Polarity drain metal