▎ 摘 要
NOVELTY - A needle manganese dioxide/graphene composite electrode material preparing method involves taking electric conductive material, placing into plasma enhanced chemical vapor deposition vacuum apparatus, introducing hydrogen, regulating hydrogen gas flow rate and raising temperature, followed by introducing argon gas and methane gas, performing deposition process, performing etching, reducing temperature, cooling, taking etched graphene substrate material and platinum sheet, placing into platinum plated electrolyte, applying constant current, washing and drying to obtain finished product. USE - Method for preparing needle manganese dioxide/graphene composite electrode material that is utilized as binder or electric conduction glue. ADVANTAGE - The method enables preparing composite electrode material with high electrochemical performance. DETAILED DESCRIPTION - A needle manganese dioxide/graphene composite electrode material preparing method involves taking electric conductive material, placing into plasma enhanced chemical vapor deposition vacuum apparatus with 5 Pa pressure or less, introducing hydrogen, regulating hydrogen gas flow rate of 10-50 sccm, controlling plasma enhanced chemical vapor deposition apparatus pressure of 150-350 Pa and hydrogen atmosphere pressure of 150-350 Pa and raising temperature at 500-700 degrees C for 20-60 minutes, followed by introducing argon gas and methane gas, regulating gas flow rate of methane of 35-45 sccm, gas flow rate of argon gas of 80-100 sccm, plasma enhanced chemical vapor deposition apparatus pressure if 300-500 Pa and radio frequency power of 100-200 W, performing deposition process at 500-700 degrees C for 20-35 minutes with 300-500 Pa pressure, adjusting methane and argon gas flow rate of 20-80 sccm, plasma enhanced chemical vapor deposition apparatus vacuum pressure of 100-400 Pa, argon gas atmospheric pressure of 100-400 Pa and radio frequency power of 75-225 W, performing etching at 500-700 degrees C for 30 seconds-10 minutes, reducing temperature at a speed of 5-20 degrees C/second, cooling to room temperature to obtain etched graphene substrate material, taking etched graphene substrate material as anode and platinum sheet as cathode, placing into platinum plated electrolyte, applying constant current of current density of 0.5-50 mA/cm2 for 1-60 minutes for deposition, washing with deionized water and placing into oven at 80-120 degrees C for 30-120 minutes for drying to obtain finished product, where the electrolyte concentration is 0.1-0.3 mol/l, sodium sulfate solution and mixed solution concentration is 0.1-0.3 mol/l, manganese sulfate solution concentration is 0.1-0.3 mol/l and the sodium sulfate solution and the manganese sulfate solution volume ratio is 1:1.