• 专利标题:   System and realizing band gap opening in graphene, used to induce band gap in bilayer graphene, involves e.g. cleaning monolayer of graphene sheet on copper foil and cutting, stacking two graphene sheets together, and rolling stacked sheets.
  • 专利号:   IN201911014024-A
  • 发明人:   KUMAR B
  • 专利权人:   UNIV AMITY
  • 国际专利分类:   H01L021/04, H01L029/16, C01B032/182, H01L043/10, C01B032/19
  • 专利详细信息:   IN201911014024-A 20 Aug 2021 H01L-021/04 202185 Pages: 11 English
  • 申请详细信息:   IN201911014024-A IN11014024 08 Apr 2019
  • 优先权号:   IN11014024

▎ 摘  要

NOVELTY - System and realizing band gap opening in graphene, comprises firstly, cleaning monolayer of graphene sheet grown in large area on copper foil and neatly cutting using scissor, stacking two graphene sheets together with copper foils, rolling the stacked graphene sheets with copper foil by roll mill for plastic deformation of graphene, subsequently, to break the symmetry in the bilayer graphene sheets, transferring plastic deformed graphene on the hexagonal boron nitride/substrates, and further, performing Raman spectroscopy and infrared spectroscopy on the samples for the confirmation of band gap opening in the graphene. USE - The system and the method are useful for: realizing band gap opening in graphene; and inducing band gap in bilayer graphene transferred on hexagonal boron nitride (all claimed). ADVANTAGE - The system and the method: are easy and cost effective; utilizes roll bonding process for severe plastic deformation, thus increasing hardness of the system; and provides induced band gap in bilayer graphene, thus exhibiting enhanced electrical and mechanical properties on a massive scale for commercial applications in electronic industry.