• 专利标题:   Graphene quantum dot optical detector, has graphene quantum dot layer formed with multiple graphene quantum dots and arranged with graphene layer, where graphene quantum dot layer removes moisture and solution in graphene layer.
  • 专利号:   WO2014185587-A1, KR2014134131-A, KR1481000-B1, EP2999010-A1, US2016351738-A1, EP2999010-A4
  • 发明人:   CHOI S H, KIM S, KIM C O, SHIN D H
  • 专利权人:   UNIV KYUNGHEE IND COOP
  • 国际专利分类:   H01L031/09, H01L031/0224, H01L031/028, H01L031/0352, H01L031/18
  • 专利详细信息:   WO2014185587-A1 20 Nov 2014 H01L-031/09 201481 Pages: 29
  • 申请详细信息:   WO2014185587-A1 WOKR005886 03 Jul 2013
  • 优先权号:   KR053894, WOKR005886

▎ 摘  要

NOVELTY - The detector has a graphene quantum dot layer formed with multiple graphene quantum dots and arranged with a graphene layer. Thickness of the graphene quantum dot layer is 50-150 nanometer. The graphene layer is divided into two graphene layer units. A contact electrode is formed in the graphene layer units. A contact electrode is made of silver, gold and aluminum. The graphene quantum dot layer removes moisture and solution in the graphene layer. The moisture and solution are coated on one of the graphene layer units. USE - Graphene quantum dot optical detector. ADVANTAGE - The detector simplifies large area graphene manufacture process. The detector improves detectivity and response speed performance and reduces degree of photo reactivity by wide broadband. The detector improves property by inserting the graphene quantum dot between the graphenes. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene quantum dot photo detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of a graphene quantum dot optical detector.