▎ 摘　　要

NOVELTY - Graphene/silicon schottky junction photoelectric detector containing intercalation comprises silicon substrate (1), silicon dioxide insulating layer (2), back electrode (3), gadolinium iron garnet film (5) and front annular electrode (7), where silicon substrate is N-type light doping, removing silicon window (4) area. The silicon substrate is covered by silicon dioxide insulating layer. The silicon substrate is located on lower layer of device. The lower portion is provided with back electrode which is ohm contact with silicon. The graphene (6) is located on upper layer of device. The upper portion is provided with front annular electrode which is ohm contact with graphene. The front annular electrode does not exceed graphene area outside silicon window. The graphene and silicon window contact Schottky junction, and thickness of gadolinium iron garnet film is 1-2 nanometer (nm) located in middle of silicon window and graphene as the intercalation. USE - Graphene/silicon Schottky junction photoelectric detector containing intercalation. ADVANTAGE - The detector has excellent insulating property of gadolinium iron garnet film to improve barrier height of graphene/silicon Schottky junction, so as to increase built-in electric field and inhibit reverse saturated dark current, gadolinium iron garnet film has excellent uniformity and continuity, passivates silicon surface, reduces surface state density, so as to reduce the surface composite dark current for suppressing dark current of detector, photocurrent is raised so as to improve the switch ratio of device, detection rate and reliability, corresponding preparation technique has simple operation and good stability, and detector is good for breaking through technical bottle-neck of remote weak radiation signal detection. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing graphene/silicon schottky junction photoelectric detector containing intercalation, which involves: (A) preparing clean silicon oxide sheet, where silicon is N-type light doping, crystal orientation is 100, and thickness of silicon dioxide insulating layer is 200-300 nm; (B) using buffer oxide etching liquid to remove natural oxide layer on back surface of silicon oxide sheet, and depositing titanium (Ti) and gold (Au) on back surface by electron beam evaporation technology as back electrode to form ohmic contact with silicon; (C) defining square area on front by ultraviolet photo etching technology, using buffer oxide etching liquid to remove silicon dioxide insulating layer of square area, and exposing silicon window; (D) depositing layer of gadolinium iron garnet film with thickness of 1-2 nm on surface of silicon window area; (E) transferring graphene on gadolinium iron garnet film, and area of the graphene covered is greater than area of silicon window; and (F) using ultraviolet lithography technology and electron beam evaporation technology to deposit titanium (Ti) and gold (Au) on graphene area outside silicon window as positive annular electrode to form ohmic contact with the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows preparation process representation of graphene/silicon schottky junction photoelectric detector containing intercalation. Silicon substrate (1) Silicon dioxide insulating layer (2) Back electrode (3) Silicon window (4) Gadolinium iron garnet film (5) Graphene (6) Front annular electrode (7)