• 专利标题:   Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.
  • 专利号:   KR2015000362-A
  • 发明人:   HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   KR2015000362-A 02 Jan 2015 C01B-031/02 201514 Pages: 7
  • 申请详细信息:   KR2015000362-A KR072714 24 Jun 2013
  • 优先权号:   KR072714

▎ 摘  要

NOVELTY - Manufacture of single crystal graphene film involves melting catalyst layer on a substrate, cooling the molten catalyst to solidify catalyst layer, forming catalyst region, and expanding solidified catalyst region to expand cooling area of the catalyst layer. A carbon source is supplied to the catalyst during cooling or expanding process. USE - Manufacture of single crystal graphene film (claimed). ADVANTAGE - The boundary between the crystals is minimized by increasing the surface area of graphene crystal of single crystal graphene film.