• 专利标题:   Anisotropic conductive film structure comprises array of discrete conductive regions within continuous region of adhesive dielectric material, where discrete conductive regions of array is mutually laterally spaced by pitch, and discrete conductive regions comprises conductive carbon-based material.
  • 专利号:   US2022077098-A1
  • 发明人:   TUTTLE M E, NAKANO E
  • 专利权人:   MICRON TECHNOLOGY INC
  • 国际专利分类:   H01L023/00, H01L025/065
  • 专利详细信息:   US2022077098-A1 10 Mar 2022 H01L-023/00 202227 English
  • 申请详细信息:   US2022077098-A1 US456066 22 Nov 2021
  • 优先权号:   US236687, US456066

▎ 摘  要

NOVELTY - Anisotropic conductive film structure comprises an array of discrete conductive regions within a continuous region of at least one adhesive dielectric material, the discrete conductive regions of the array being mutually laterally spaced from one another by at least one predetermined pitch, at least some discrete conductive regions each comprising: a conductive carbon-based material; and a seed material extending along vertical sidewalls of the conductive carbon-based material and along only one of an uppermost surface and a lowermost surface of the conductive carbon-based material. The at least one adhesive dielectric material extends along vertical sidewalls of the seed material and along both an uppermost surface and a lowermost surface of the seed material. The at least some discrete conductive regions each comprise a solid region of the conductive carbon-based material. The conductive carbon-based material defines a void space in it. USE - As anisotropic conductive film structure. ADVANTAGE - The anisotropic conductive film structure exhibits extremely low electrical resistivity, and enables the anisotropic conductive film to effectively electrically connect conductive elements of adjoining dice (or an adjoining die and substrate) comprising dice or substrates with a high density of small-dimensioned elements, where the anisotropic conductive film structure may also be formed to be thin (e.g., of a relatively small vertical height), and may allow fabrication of vertically compact semiconductor device assemblies comprising multiple, stacked dice (e.g., compact semiconductor device packages). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a semiconductor device assembly; (2) a method for forming the anisotropic conductive film structure; and (3) a method for forming the semiconductor device assembly DESCRIPTION OF DRAWING(S) - The drawing shows a front and top perspective, cross-sectional, and partial cut-away, schematic of the anisotropic conductive film. Anisotropic conductive film (100) Discrete conductive region (102) First adhesive dielectric material (104) Second adhesive dielectric material (106) Upper surface (110) Lower surface (112) Base material (114)