▎ 摘　　要

NOVELTY - Photoelectric synaptic device based on two-dimensional transition metal sulfide/graphene hetero structure and ion medium layer comprises a substrate for supporting the whole device. The substrate is hard substrate or a flexible substrate. The source electrode and the drain electrode are set on the substrate. The source electrode and the drain electrode are not connected. The source electrode and the drain electrode can be used for applying bias voltage or as the receiving end of the output signal. A channel layer is set on the source electrode and the drain electrode. The channel layer is further set on the substrate. The channel layer is used as the electric signal transport channel connected with the source electrode. The two-dimensional transition metal sulfide is used as light absorbing material for receiving light excitation signal through direct band gap transition near the Van Hough point. The gate dielectric layer is covered on the channel layer. USE - Photoelectric synaptic device based on two-dimensional transition metal sulfide/graphene hetero structure and ion medium layer. ADVANTAGE - The device utilizes the high response amplitude, wide response bandwidth and ultra-fast response speed of the two-dimensional transition metal sulfide/graphene heterojunction to light, combined with the electric double layer effect generated by the ion migration of the gate dielectric layer, realizes that the device can generate synaptic current under the stimulation of electrical signal or optical signal, and realizes various synaptic behaviors of optical and electrical co-stimulation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacturing method of two-dimensional transition metal sulfide/graphene hetero structure and ion medium layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of photoelectric synaptic device based on two-dimensional transition metal sulfide/graphene hetero structure and ion medium layer.