▎ 摘　　要

NOVELTY - The auto-emission film diode comprises an emitter in the shape of a tip and an anode. The anode is made of a film having multiple layers of graphene located on the carbon surface of a semi-insulating silicon carbide substrate with a bulk having a resistance of greater than 108 ohms. The radius of curvature of the emitter tip is below 30 nanometer, and the length of the emitter tip is above 200 nanometer. The interelectrode distance of the emitter and anode is below the mean free path of electrons under normal conditions and the deepening of the interelectrode gap in the substrate is more than 100 nanometer. USE - Auto-emission film diode for use in manufacturing of light sources, field emission displays and microwave electronic devices. ADVANTAGE - Efficiency and stability of field emission are increased.