▎ 摘　　要

NOVELTY - Semiconductor device (100A) comprises stack (110a) of layers defining a sidewall surface (119a) and comprising source and drain layers, a channel structure (120) extending through the stack of layers, oriented in a vertical direction perpendicular to a main surface of the stack of layers, and configured to have a current flow path in the vertical direction. The channel structure comprises a two-dimensional (2D) semiconductor material, a core structure positioned inside and surrounded by the channel structure, and a gate structure surrounding portion of the channel structure. USE - Semiconductor device of NAND flash memory. ADVANTAGE - The semiconductor device enable 2D semiconductor materials, which are high mobility materials, to be utilized in 3D horizontal stacking of semiconductor devices with enhanced device performance and without necessarily using a semiconductor base. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating a semiconductor device, which involves forming a stack of layers which defines a sidewall surface and comprises source and drain layers, forming a channel structure that extends through the stack of layers, is oriented in a vertical direction perpendicular to a main surface of the stack of layers, and is configured to have a current flow path in the vertical direction, where the channel structure comprises a two-dimensional (2D) semiconductor material, forming a core structure positioned inside and surrounded by the channel structure, and forming a gate structure surrounding at least part of the channel structure. DESCRIPTION OF DRAWING(S) - The drawing shows a vertical cross-sectional view of a semiconductor device. 100ASemiconductor device 110aStack 119aSidewall surface 120Channel structure 131aHigh-k dielectric