▎ 摘　　要

NOVELTY - Surface treatment includes placing sapphire as substrate in acetone, performing ultrasonic oscillating cleaning, removing matrix from deionized water, drying, extracting, removing air, introducing hydrogen in quartz reaction chamber, performing surface etching on sapphire substrate, growing graphene, cooling, opening vacuum pumping device, extracting, passing argon and hydrogen in quartz reaction chamber, heating, feeding methane in quartz reaction chamber, cooling, removing sample and depositing graphene on sapphire substrate. USE - Method of surface treatment used for growing graphene based on sapphire substrate (claimed). ADVANTAGE - The method avoids destruction of graphene during transfer and simplifies the complexity of the operation. DETAILED DESCRIPTION - Surface treatment comprises placing sapphire as substrate in acetone, performing ultrasonic oscillating cleaning for 10-20 minutes, performing ultrasonic cleaning with anhydrous ethanol for 10-20 minutes, performing ultrasonic oscillating cleaning with deionized water for 10-20 minutes, removing matrix from deionized water, drying with 99.999% high purity argon, placing sapphire substrate in quartz reaction chamber, opening vacuum suction device, extracting under 10-100 Pa, removing air in quartz reaction chamber, introducing hydrogen in quartz reaction chamber, performing surface etching on sapphire substrate at 1000-1100 degrees C for 1-3 hours, growing graphene, cooling sapphire substrate etched on the surface to room temperature, opening vacuum pumping device, extracting under 10-100 Pa, passing argon and hydrogen in quartz reaction chamber, keeping flow ratio of argon to hydrogen at 5:1-2, maintaining pressure under 100-500 Pa, heating at 1050-1100 degrees C, feeding methane in quartz reaction chamber, maintaining pressure under 100-500 Pa, keeping for 2-3 hours, cooling to room temperature, removing sample and depositing graphene on sapphire substrate. A base is provided below the quartz reaction chamber. A temperature control system is provided on the periphery. The inlet end of quartz reaction chamber is connected with methane, argon and hydrogen input pipes. A gas flow meter is installed on the input pipe. The outlet is connected to vacuum suction device.