▎ 摘　　要

NOVELTY - Use of fully-covalently-bonded fully-reduced graphene oxide field-effect transistor in production of biosensor which involves connecting a full covalent bond to a fully-reduced graphene oxide field effect transistor with a source electrode and a drain electrode, immersing in 5-15 mu L solution comprising glutaraldehyde, 1-(bis(dimethylamino)methylene)-1H-1,2,3-triazolo(4,5-b)pyridinium 3-oxide hexafluorophosphate and/or 1-pyrenebutyric acid as crosslinking agent, ultrasonically-processing, washing with a phosphate buffered saline solution, immersing in 5-20 mu L antibody solution, ultrasonically-processing, washing, immersing in 5-20 mu L blocking agent, reacting, washing, testing a transfer curve of transistor after drying to obtain a Dirac point value (D1), immersing in 40-60 mu L test solution, ultrasonically-processing, washing, drying, and testing transfer curve of to obtain a Dirac point value (D2), and calculating Dirac point voltage difference as sensing output signal, is claimed. USE - Use of fully-covalently-bonded fully-reduced graphene oxide field-effect transistor in production of biosensor used for simultaneously detecting different kinds of cancer markers. DETAILED DESCRIPTION - Use of fully-covalently-bonded fully-reduced graphene oxide field-effect transistor in production of biosensor which involves connecting (i) a full covalent bond to a fully-reduced graphene oxide field effect transistor with a source electrode and a drain electrode, immersing a surface of the field-effect transistor in 5-15 mu L crosslinking agent solution comprising glutaraldehyde, 1-(bis(dimethylamino)methylene)-1H-1,2,3-triazolo(4,5-b)pyridinium 3-oxide hexafluorophosphate and/or 1-pyrenebutyric acid as crosslinking agent, ultrasonically-processing for 0.5-2 hours, and washing the surface with a phosphate buffered saline solution, immersing (ii) the surface in 5-20 mu L antibody solution having a concentration of 50-150 mu g.mL-1, and ultrasonically-processing at 20-25 degrees C for 1-2 hours, washing (iii) the surface with a phosphate buffered saline solution, immersing the surface in 5-20 mu L blocking agent, and reacting for 1-2 hours to prevent non-specific adsorption of gate surface of the field-effect transistor, washing (iv) the surface with a phosphate buffered saline solution, and testing a transfer curve of the field-effect transistor after drying at 20-25 degrees C for 2 seconds or more to obtain a Dirac point value (D1), immersing the surface of the field-effect transistor in 40-60 mu L test solution, ultrasonically-processing at 20-25 degrees C for 1-3 hours, washing the surface with a phosphate buffered saline (PBS) solution, drying at 20-25 degrees C for 2 seconds or more, and testing transfer curve of the field-effect transistor to obtain a Dirac point value (D2), and calculating Dirac point voltage difference between the Dirac point value (D2) and the Dirac point value (D1) as a sensing output signal, is claimed.