▎ 摘　　要

NOVELTY - The memristor has a conductive base layer, a metal electrode layer and a functional thin film layer arranged between the conductive base layer and the metal electrode layer. The functional thin film layer included with a modified two-dimensional titanium carbide layer and graphene oxide layers arranged on both sides of the modified two-dimensional titanium carbide layer. The modified two-dimensional titanium carbide layer is a lapis lazuli modified two-dimensional titanium carbide layer. USE - Surface engineering modified two-dimensional titanium carbide memristor for non-volatile resistance random access memory (RRAM) and flash. ADVANTAGE - The memristor exhibits a bistable storage behavior, has ultra-low working voltage, long retention time, typical bistability electric switch and so characteristics, compared with the single-layer structure; increases the writability; and avoids the modified 2D titanium carbides under the cyclic voltage scanning, the erasable stability is high. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a method for preparing surface engineering modified two-dimensional titanium carbide memristor; and a data storage device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the surface engineering modified two-dimensional titanium carbide memristor (Drawing includes non-English language text).