• 专利标题:   Producing graphene thin film, comprises producing precursor layer using coal tar or coal tar pitch on first substrate, producing catalyst layer on precursor layer, heat treating catalyst layer under inert gas atmospheric, and cooling.
  • 专利号:   KR2015129108-A, KR1585767-B1
  • 发明人:   LEE T W, SEO H K
  • 专利权人:   POSCO, POSTECH ACADIND FOUND
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2015129108-A 19 Nov 2015 C01B-031/04 201613 Pages: 26
  • 申请详细信息:   KR2015129108-A KR054638 08 May 2014
  • 优先权号:   KR054638

▎ 摘  要

NOVELTY - Producing graphene thin film, comprises (a) producing precursor layer using coal tar or coal tar pitch on a first substrate, (b) producing a catalyst layer (13) on the precursor layer (12), and (c) heat treating the catalyst layer under inert gas atmospheric, and cooling the catalyst layer to produce graphene thin film (14). USE - The method is useful for producing graphene thin film for: electronic devices (organic light emitting diodes, organic light emitting diode, inorganic solar cells, organic photovoltaic diode, inorganic thin film transistors, a memory card, electro-chemical or biosensors, radio frequency devices, rectifier, complementary metal-oxide semiconductor, and organic thin film transistor); electrochemical device (lithium batteries or fuel cell) (all claimed); and electrodes, and conductive wires. ADVANTAGE - The method improves productivity and quality of graphene thin film, and is simple to process. The graphene thin film has excellent conductivity, and is economical, environmentally friendly, and safe. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene thin film produced by the above method. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic representation of the method for producing graphene thin film. Substrate (11) Precursor layer (12) Catalyst layer (13) Graphene thin film (14)