▎ 摘　　要

NOVELTY - The etching-free method comprises forming a metal oxide layer on an oxide substrate using reactive metal oxide to prepare a first structure, and growing the graphene by heat treatment, while exposing the first structure to a gas containing carbon. The metal layer utilizes the reactive metal oxide in which the oxide reactivity is higher than the oxide substrate. The graphene is grown on the metal oxide layer. The heat-treating step is carried out in the presence of an inert gas or vacuum. The method further comprises patterning the metal oxide layer. USE - The etching-free method is useful for growing graphene (claimed) on a substrate, which is useful in a semiconductor device. ADVANTAGE - The etching-free method is capable of economically, rapidly and simply growing the graphene with high quality and improved physical properties in a convenient manner. DETAILED DESCRIPTION - The etching-free method comprises forming a metal oxide layer on an oxide substrate using reactive metal oxide to prepare a first structure, and growing the graphene by heat treatment, while exposing the first structure to a gas containing carbon. The metal layer utilizes the reactive metal oxide in which the oxide reactivity is higher than the oxide substrate. The graphene is grown on the metal oxide layer. The heat-treating step is carried out in the presence of an inert gas or vacuum. The method further comprises patterning the metal oxide layer, forming an oxidation reactive metal layer on the metal oxide layer to form a second structure, and growing the graphene on the second structure by heat treatment, while exposing the second structure to the gas containing carbon. The oxidation reactive metal layer utilizes an oxide reactivity metal in which the oxide reactivity is higher than the metal oxide layer. The heat-treatment is carried out at a temperature of 200-450 degrees C when the substrate is a glass substrate. The heat-treatment is carried out at a temperature of 200-300 degrees C when the substrate is a polymer substrate. The heat-treatment is carried out at a temperature of 1000-1200 degrees C when the substrate is a quartz substrate.