▎ 摘　　要

NOVELTY - The structure has a carrier layer (102) provided with a first side part. A seed layer is formed on the first side part. A graphene layer (108) is formed on a part of the seed layer. A part of the seed layer is removed between the carrier layer and the graphene layer to form a graphene structure of the graphene layer. A carrier structure is formed over a part of the graphene layer. An encapsulation structure is formed over a part of the carrier structure, where the encapsulation layer comprises borophosphosilicate glass, the carrier structure and the graphene layer enclose volume. USE - Hall sensor structure. ADVANTAGE - The seed layer part is removed between the carrier layer and the graphene layer to form a graphene structure of the graphene layer so as to reduce residue displacement of a Hall element, and increases output power of the Hall sensor with small space requirement and achieves better guard of the Hall sensor before environmental influences, high sensitivity and high precision of the Hall sensor. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a Hall sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a hall sensor structure. Carrier layer (102) Oxide layer (104) Metal film (106) Graphene layer (108)