• 专利标题:   Forming perovskite layer involves mixing a perovskite solution with silica shell precursor solution to produce perovskite-silica precursor solution and spin casting or drop casting perovskite-silica precursor solution.
  • 专利号:   US2021171557-A1
  • 发明人:   BAI Y, HUANG J
  • 专利权人:   NUTECH VENTURES
  • 国际专利分类:   C07F013/00, H01L051/42, H01L051/44
  • 专利详细信息:   US2021171557-A1 10 Jun 2021 C07F-013/00 202173 English
  • 申请详细信息:   US2021171557-A1 US709339 10 Dec 2019
  • 优先权号:   US709339

▎ 摘  要

NOVELTY - Forming a perovskite layer involves mixing a perovskite solution with a silica shell precursor solution to produce a perovskite-silica precursor solution and spin casting or drop casting the perovskite-silica precursor solution on a substrate to form a perovskite layer, where perovskite layer includes a multiple groups of one or more perovskite grains, each of multiple groups wrapped in a silica shell. USE - Method for forming perovskite layer. ADVANTAGE - The method is highly efficient photovoltaic materials, cost-ffective and highly competitive for commercial applications. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor device, which comprises a cathode layer, an anode layer and an active layer disposed between the cathode layer and the anode layer, where active layer includes a perovskite layer, wherein the perovskite layer includes a multiple groups of one or more perovskite grains, each of multiple groups wrapped in a silica shell.