• 专利标题:   Method for preparing deep-UV LEDs, involves preparing mesa structure on micro-patterned doped graphene and preparing patterned metal contact electrodes on graphene and n-aluminium gallium nitride surfaces respectively.
  • 专利号:   CN114695603-A
  • 发明人:   ZHANG S, BEN J, JIANG K, LI D, SUN X, CHEN Y
  • 专利权人:   CHANGCHUN INST OPTICS FINE MECHANICS P
  • 国际专利分类:   H01L033/00, H01L033/40, H01L033/42
  • 专利详细信息:   CN114695603-A 01 Jul 2022 H01L-033/00 202271 Chinese
  • 申请详细信息:   CN114695603-A CN11610434 30 Dec 2020
  • 优先权号:   CN11610434

▎ 摘  要

NOVELTY - The method involves epitaxial growing (S110) deep-UV LEDs epitaxial wafers on substrates. A photosensitive polymer material is spin-coated (S120) on a surface of the epitaxial wafer to form a uniform continuous film. A micro-patterned pattern is photo-etched (S130) on the film. A nickel catalytic metal thin film is deposited (S140) on the micro-patterned pattern to obtain a deep-UV LEDs epitaxial wafer or micro-patterned photosensitive polymer or nickel catalytic metal thin film composite structure. The deep-UV LEDs epitaxial wafer is annealed at a high temperature in an inert atmosphere to form grown micro-patterned doped graphene. A mesa structure on the micro-patterned doped graphene is prepared. Patterned metal contact electrodes are prepared on the graphene and the n-aluminium gallium nitride surfaces, respectively. Ohmic contact is formed between the metal contact electrode and the epitaxial wafer of deep-UV LEDs. USE - Method for preparing deep-UV LEDs. ADVANTAGE - The method uses the patterned graphene grown as the p-contact layer of deep-UV LEDs, uses the doping method to control the energy level of graphene, replaces the traditional UV light absorbing p-gallium nitride contact layer material, in order to improve the light extraction efficiency of deep-UV LEDs. The preparation method of the deep-UV LEDs provides a simple and feasible new scheme for preparing the deep-UV LEDs with high power and top emission. DETAILED DESCRIPTION - The top and bottom of the mesa structure are graphene and n-aluminium gallium nitride grown, respectively. An INDEPENDENT CLAIM is included for a deep-UV LED. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart of the method for preparing the deep-UV LEDs. (Drawing includes non-English language text). S110Step for epitaxial growing deep-UV LEDs epitaxial wafers on substrates S120Step for spin-coating the photosensitive polymer material on the surface of the epitaxial wafer to form the uniform continuous film S130Step for photo-etching the micro-patterned pattern on the film S140Step for deposting the nickel catalytic metal thin film on the micro-patterned pattern