▎ 摘　　要

NOVELTY - The method involves providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate is arranged within the processing region of the semiconductor processing chamber. The substrate comprises a low dielectric constant material (310) defining a set of features. A liner extends across the low dielectric constant material, and within the features, and a metal-containing layer deposited on the liner and extending within the features. A layer of material (325) is formed on a portion of the liner and the metal-containing layer, where the layer of material comprises graphene. The portion of the layer of material on the liner is removed. USE - Method for processing a semiconductor. ADVANTAGE - The layer of material is made of graphene that provides properties of both a conductive layer and a barrier layer discretely formed on metal materials while maintaining intervening materials that can cause shorting, or with easily removable material, thus producing reduced thickness structures with improved overall resistivity. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure in which material layers are included and produced 305Substrate 310Dielectric constant material 315Liner 320Metal-containing material 325Layer of material