▎ 摘　　要

NOVELTY - The chamber has a high-temperature pressure sensor connected with a non-cavity substrates structure to reduce noise pressure signal. The high-temperature pressure sensor is fixed with a graphene/boron nitride hetero-junction part (2). A sensing element senses an external pressure. The graphene/boron nitride hetero-junction part is formed as a three-layer structure to perform high temperature resistant material preparation process at 900 degree centigrade. Thickness of a boron nitride layer is about 20nm-30nm. A substrate (1) is fixed at a center part of a heat insulating lug boss (6). USE - Graphene-free high-temperature pressure sensor chamber. ADVANTAGE - The chamber can reduce liquid thermal expansion noise pressure. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a graphene-free high-temperature pressure sensor chamber. '(Drawing includes non-English language text)' Substrate (1) Graphene/boron nitride hetero-junction part (2) Heat insulating lug boss (6) Screw thread (7) Bottom fixing base (8)