▎ 摘　　要

NOVELTY - The method involves using thermal evaporation method to prepare two chromium-silver electrodes (2) on a silicon substrate (1) with 300 nm oxide layer. A gold wire (3) is connected with the two electrodes by a bonding machine. The gold wire and the chromium-silver electrode are directly connected with an external source table (5). A direct current voltage is applied to a two-dimensional material heterojunction (4) by using the external source table. A scanning probe microscope is utilized to observe a shape and electrical characteristic of the two-dimensional material and a heterostructure in situ under the action of an external electric field. The two-dimensional material heterojunction device is configured as one of molybdenum disulfide (MoS2)/graphene, MoS2/tungsten diselenide (WSe2), indium selenide (InSe)/WSe2, molybdenum telluride (MoTe2)/MoS2, and hexadecafluoro copper phthalocyanine (F16-CuPc)/germanium arsenide (GeAs). USE - Method for testing electrical properties of two-dimensional material heterojunctions by KPFM under electric field coupling for use in electrical and photoelectric devices. ADVANTAGE - The method can reveal the structure and performance change under electric field modulation. The method can enable a clearer understanding of the physics of two-dimensional materials and their heterostructured devices, making up for the deficiency that the original instruments can only characterize the intrinsic electrical properties of the devices. DESCRIPTION OF DRAWING(S) - The drawing shows a circuit diagram of the device for testing electrical properties and an AFM measurement. Silicon substrate (1) Chromium-silver electrode (2) Gold wire (3) Two-dimensional material heterojunction (4) External source table (5)