▎ 摘　　要

NOVELTY - Graphene oxide suspension is coated on a silicon wafer with oxide film, cleaned and dried, to obtain graphene oxide film. The film is spin-coated using polymethyl(meth)acrylate, heated on a hot plate, plasma-etched, cleaned, heat-treated using reducing gas and temperature of furnace is reduced to room temperature, to obtain reduced graphene oxide wafer. The wafer is electrolytically treated using gold/chromium alloy electrode and then annealed in argon/hydrogen atmosphere, to obtain graphene film. USE - Preparation of graphene film used for gas sensor. ADVANTAGE - The method efficiently and economically provides graphene film having high dimensional stability. DETAILED DESCRIPTION - Graphene oxide suspension having concentration of 0.0001-0.0005 g/ml is coated on a silicon wafer with oxide film, cleaned and dried at 30-90 degrees C for 10 minutes to 1 hour, to obtain graphene oxide film. The film is spin-coated using polymethyl(meth)acrylate, heated on a hot plate and pressed with force of 0.5-2 N/cm2 for 30-90 seconds. The film is removed from plate and placed in air for 2-10 minutes, plasma-etched for 5 minutes to 1 hour, cleaned using acetone for 5-20 hours, heat-treated at 300-900 degrees C for 5-50 minutes in a tubular furnace using reducing gas and temperature of furnace is reduced to room temperature, to obtain reduced graphene oxide wafer. The wafer is electrolytically treated using gold/chromium alloy electrode having size of 500 mu mx 500 mu m with electrode spacing of 20 m and copper mask as template, and then annealed in argon/hydrogen atmosphere, to obtain graphene film.