▎ 摘　　要

NOVELTY - The generator has a substrate (1), an antiferromagnetic material, a nonmagnetic metal atom injection and deposition mechanism and a voltage generation mechanism. The antiferromagnetic material is placed on the nonmagnetic insulating substrate. The nonmagnetic metal atom injection and deposition mechanism is positioned above the nonmagnetic insulating substrate. The voltage generation mechanism is positioned on two sides of the nonmagnetic insulating substrate. The non-magnetic metal atom injection deposition mechanism deposits non-magnetic metal atoms on the non-magnetic insulating substrate at a concentration of 1/144-1/36 atom/silicon. The non-magnetic metal atom injection deposition mechanism comprises a vapor deposition apparatus (3) and an atom injection apparatus (2). The atom injection apparatus is located above the vapor deposition apparatus and the atom injection apparatus is provided in communication with the vapor deposition apparatus. USE - Spin polarization current generator for spintronics device. ADVANTAGE - The generator effectively avoids the influence of macroscopical ferromagnetism on the spin electronic device, and avoids the technical problem that the two-dimensional material is cut into strips and the doped atoms are located in the experiment. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for realizing semi-metal based on anti-ferromagnetic material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the spin current output. Substrate (1) Atom injection apparatus (2) Vapor deposition apparatus (3) First electrode (4) Second electrode (5) Power supply (6) Circuit switch (7)